KOLLMORGEN CB06551 PRD-B040SSIB-63 科尔摩根 伺服驱动器

KOLLMORGEN CB06551 PRD-B040SSIB-63 科尔摩根 伺服驱动器

KOLLMORGEN CB06551 PRD-B040SSIB-63 科尔摩根 伺服驱动器

1、压阻式压力传感器

电阻应变片是压阻式应变传感器的主要组成部分之一。金属电阻应变片的工作原理是吸附在基体材料上应变电阻随机械形变而产生阻值变化的现象，俗称为电阻应变效应。

2、陶瓷压力传感器

陶瓷压力传感器基于压阻效应，压力直接作用在陶瓷膜片的前表面，使膜片产生微小的形变，厚膜电阻印刷在陶瓷膜片的背面，连接成一个患斯通电桥，由于压敏电阻的压阻效应，使电桥产生一个与压力成正比的高度线性、与激励电压也成正比的电压信号，标准的信号根据压力量程的不同标定为2.0/3.0/3.3mV/V等，可以和应变式传感器相兼容。

3、扩散硅压力传感器:

扩散硅压力传感器工作原理也是基于压阻效应，利用压阻效应原理，被测介质的压力直接作用于传感器的膜片上(不锈钢或陶瓷)，使膜片产生与介质压力成正比的微位移，使传感器的电阻值发生变化，利用电子线路检测这一变化，并转换输出一个对应于这一压力的标准测量信号。

4、蓝宝石压力传感器:

利用应变电阻式工作原理，采用硅-蓝宝石作为半导体敏感元件，具有的计量特性。因此，利用硅-蓝宝石制造的半导体敏感元件，对温度变化不敏感，即使在高温条件下，也有着很好的工作特性;蓝宝石的抗辐射特性强;另外，硅-蓝宝石半导体敏感元件，无p-n漂移。

KOLLMORGEN CB06551 PRD-B040SSIB-63 科尔摩根 伺服驱动器

1, piezoresistive pressure sensor

Resistance strain gauge is one of the main components of piezoresistive strain sensor. The working principle of the metal resistance strain gauge is that the strain resistance adsorbed on the substrate material changes with mechanical deformation, which is commonly known as the resistance strain effect.

2, ceramic pressure sensor

The ceramic pressure sensor is based on the piezoresistive effect, the pressure directly acts on the front surface of the ceramic diaphragm, causing the diaphragm to produce a small deformation, the thick film resistance is printed on the back of the ceramic diaphragm, connected to a stone bridge, due to the piezoresistive effect of the varistor, the bridge produces a voltage signal that is linear in height and proportional to the pressure and also proportional to the excitation voltage. The standard signal is calibrated to 2.0/3.0/3.3mV/V according to different pressure ranges, which can be compatible with strain gauge sensors.

3. Diffused silicon pressure sensor:

The working principle of the diffused silicon pressure sensor is also based on the piezoresistive effect, using the piezoresistive effect principle, the pressure of the measured medium directly acts on the diaphragm of the sensor (stainless steel or ceramic), so that the diaphragm generates a micro displacement proportional to the pressure of the medium, so that the resistance value of the sensor changes, and the electronic circuit is used to detect this change. A standard measurement signal corresponding to this pressure is converted and output.

4, sapphire pressure sensor:

Based on the strain-resistance working principle, silicon-sapphire is used as the semiconductor sensitive element, which has the measurement characteristics. Therefore, the semiconductor sensitive element made of silicon-sapphire is not sensitive to temperature changes, and has good working characteristics even under high temperature conditions. Sapphire has strong anti-radiation characteristics; In addition, the silicon-sapphire semiconductor sensor has no p-n drift.