IC755CSS06RDA纳芯微发布首款1200V SiC MOSFET

纳芯微近日重磅推出了其首款1200V SiC MOSFET系列产品NPC060N120A，其RDSon值低至60mΩ，展现了出色的导电性能。这款产品提供了通孔式TO-247-4L和表面贴装TO-263-7L两种封装形式，满足车规与工规不同等级的需求。

纳芯微的碳化硅MOSFET系列在性能上表现卓越，不仅具有稳定的RDSon温度特性，而且在门极驱动电压上拥有更宽的覆盖度，确保了高可靠性。这一特性使得NPC060N120A系列特别适用于电动汽车的OBC/DCDC、热管理系统，以及光伏、储能系统（ESS）和不间断电源（UPS）等关键领域。纳芯微的此次推出，无疑将进一步推动这些领域的技术进步与性能提升。

Nanomicro recently launched its first 1200V SiC MOSFET family, the NPC060N120A, with an RDSon value as low as 60mΩ, demonstrating excellent electrical conductivity. This product is available in two package forms: through-hole TO-247-4L and surface mount TO-263-7L TO meet the needs of different levels of vehicle and work gauges.

Nanomicro's silicon carbide MOSFET family delivers outstanding performance, not only with stable RDSon temperature characteristics, but also with wider coverage across the gate drive voltage, ensuring high reliability. This feature makes the NPC060N120A series particularly suitable for OBC/DCDC, thermal management systems for electric vehicles, as well as key areas such as photovoltaics, energy storage systems (ESS) and uninterruptible power supplies (UPS). The launch of Nano Micro will undoubtedly further promote technological progress and performance improvement in these areas.