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VMIVME-5565-110000 反射记忆 超高速光纤反射存储器品牌GE销售范围全国安装方式直接上机售后服务质保一年功率240VDC温度1000℃重量1.2kg数值12.052.052可售卖地全国材质金属类型DCS型号VMIVME-5565-110000VME-5565反射内存节点卡提供了一个高速、低延迟、确定性的接口,允许在多达256个独立系统(节点)之间以高达170兆字节/秒的速率共享数据
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VMIVME-5565-110000 反射记忆 超高速光纤反射存储器
VME-5565反射内存节点卡提供了一个高速、低延迟、确定性的接口,允许在多达256个独立系统(节点)之间以高达170兆字节/秒的速率共享数据。每个反射内存板可以配置64兆字节或128兆字节的板载SDRAM。
本地SDRAM提供了对存储数据的快速读取访问时间。写操作存储在本地SDRAM中,并通过高速光纤数据路径广播到其他反射内存节点。
节点之间的数据传输是软件透明的,因此不需要I/O开销。在峰值数据速率期间发送和接收FIFOs缓冲数据,以优化处理器和总线性能,维持高数据吞吐量。
The VME-5565 Reflected memory node card provides a high-speed, low-latency, deterministic interface that allows data to be shared between up to 256 independent systems (nodes) at rates of up to 170 megabytes per second. Each reflective memory board can be configured with either 64 megabytes or 128 megabytes of on-board SDRAM.
Local SDRAM provides fast read access time to stored data. Write operations are stored in local SDRAM and broadcast to other reflective memory nodes via high-speed fiber data paths.
Data transfers between nodes are software-transparent, so there is no I/O overhead. FIFOs buffered data is sent and received during peak data rates to optimize processor and bus performance and maintain high data throughput.
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