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AB 罗克韦尔80190-380-01-R整流器板品牌AB 罗克韦尔加工定制否支持系统紧急停车系统产地美国功能控制器模块最小起订量1供货数量30是否进口是重量0.56KG规格23*23*10成色全新系统环境稳定可售卖地北京;天津;河北;山西;内蒙古;辽宁;吉林;黑龙江;上海;江苏;浙江;安徽;福建;江西;山东;河南;湖北;湖南;广东;广西;海南;重庆;四川;贵州;云南;西藏;陕西;甘肃;青海;宁夏
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AB 罗克韦尔80190-380-01-R整流器板
AB 罗克韦尔80190-380-01-R整流器板
整流器是一个整流装置,简单的说就是将交流(AC)转化为直流(DC)的装置。它有两个主要功能:
第一,将交流电(AC)变成直流电(DC),经滤波后供给负载,或者供给逆变器;
[]第二,给蓄电池提供充电电压。因此,它同时又起到一个充电器的作用。
三极管的hFE参数与贮存时间ts相关,一般hFE大的三极管ts也较大,过去人们对ts的认识以及ts的测量仪器均较为欠缺,人们更依赖hFE参数来选择三极管。
在开关状态下,hFE的选择通常有以下认识:第一、hFE应尽可能高,以便用最少的基极电流得到最大的工作电流,同时给出尽可能低的饱和电压,这样就可以同时在输出和驱动电路中降低损耗。
但是,如果考虑到开关速度和电流容限,则hFE的最大值就受到限制;第二、中国的厂家曾经倾向于选用hFE较小的器件,例史如hFE为10到15,甚至8到10的三极管就一度很受欢迎(后来,由于基极回路流行采用电容触发线路,hFE的数值有所上升),hFE的数值小则饱和深度小,从而有利于降低晶体管的发热。
AB 罗克韦尔80190-380-01-R整流器板
A rectifier is a rectifier device that simply converts alternating current (AC) into direct current (DC). It has two main functions:
First, the alternating current (AC) into direct current (DC), after filtering to supply the load, or supply the inverter;
[] Second, provide charging voltage to the battery. Therefore, it also acts as a charger.
The hFE parameter of the triode is related to the storage time ts, and the triode with large hFE is also larger in general. In the past, people's understanding of ts and the measuring instrument of ts are relatively lacking, and people rely more on hFE parameters to choose the triode.
In the switching state, the selection of hFE usually has the following understanding: First, hFE should be as high as possible, in order to obtain the maximum operating current with the least base current, while giving the lowest possible saturation voltage, so that the loss can be reduced in the output and drive circuit at the same time.
However, if the switching speed and current tolerance are considered, the maximum value of hFE is limited. Second, Chinese manufacturers have tended to choose smaller hFE devices, such as hFE 10 to 15, and even 8 to 10 transistors were once very popular (later, due to the popular use of capacitive trigger circuit in the base loop, the value of hFE has increased), the value of hFE is small, the saturation depth is small, which is conducive to reducing the heat of the transistor.
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