AMAT/AppliedMaterials 0100-71267计数器模块

AMAT/AppliedMaterials 0100-71267计数器模块

隔离栅是一个MOSFET结构，不是一个单独的MOSFET。MOSFET 栅极结构取代了双极晶体管的基极，由此产生的 IGBT 具有发射极、栅极和集电极引脚。　　

基本的 IGBT 操作很简单：从栅极到发射极的正电压 (U GE ) 打开 MOSFET 栅极。　　

这使得连接到集电极的电压能够驱动基极电流通过双极晶体管和 MOSFET;双极晶体管导通，负载电流流过 IGBT。关断IGBT，用U GE ≤ 0 V的电压关断 MOSFET，中断基极电流，关断双极晶体管，IGBT停止导通电流。

IGBT 单向传导电流。由于 MOSFET 栅极的容性特性，栅极电流只需对栅极电容充电即可开启器件。虽然栅极结构的电容特性限制了控制 IGBT 所需的功率量，但该器件的双极特性将其开关频率限制在最大约 30 kHz。然而，降低开关损耗的谐振拓扑可以使 IGBT 以更高的频率进行开关。

The isolation gate is a MOSFET structure, not a separate MOSFET. The MOSFET gate structure replaces the base of a bipolar transistor, and the resulting IGBT has an emitter, gate, and collector pins.

The basic IGBT operation is simple: a positive voltage (U GE) from gate to emitter opens the MOSFET gate.

This allows the voltage connected to the collector to drive the base current through the bipolar transistor and MOSFETs; The bipolar transistor is on and the load current flows through the IGBT. Turn off the IGBT, use the voltage of UGE ≤ 0 V to turn off the MOSFET, interrupt the base current, turn off the bipolar transistor, and stop the IGBT conducting the current.

IGBT conducts a unidirectional current. Due to the capacitive nature of the MOSFET gate, the gate current only needs to charge the gate capacitor to turn on the device. While the capacitive nature of the gate structure limits the amount of power required to control an IGBT, the bipolar nature of the device limits its switching frequency to a maximum of about 30 kHz. However, resonant topologies that reduce switching losses can enable IGBTs to switch at higher frequencies.