5SHY4045L0004晶闸管 3BHB021400R0002 半导体可控硅

5SHY4045L0004晶闸管是一种由硅制成的单向半导体器件，基本上晶闸管（SCR）是一种三端子四层半导体器件，由交替的P型和N型材料组成。

5SHY4045L0004晶闸管具有三个pn结J 1、J 2和J 3，下图显示了具有 pnpn 层的 晶闸管。晶闸管具有端子 阳极(A)、阴极(K) 和 栅极G)，栅极端子 (G) 连接到靠近阴极 (K) 端子的 p 层。

5SHY4045L0004晶体管四层像两个晶体管一样工作，它们连接在一起（如下图所示），一个的输出形成另一个的输入，门作为一种“启动马达”来激活它们。

5SHY4045L0004单个晶闸管（SCR）是一个 pnp 晶体管 (Q 1 ) 和一个npn 晶体管(Q 2 ) 的组合。这里，Q1的发射极作为 SCR 的阳极端子，而 Q2的发射极是它的阴极。另外，Q1的基极与Q2 的集电极连接，Q1 的集电极与Q 的基极连接，晶闸管的栅极端子也连接到Q2的基极。

5SHY4045L0004晶闸管 3BHB021400R0002 半导体可控硅

The 5SHY4045L0004 thyristor is a unidirectional semiconductor device made of silicon, basically a thyristor (SCR) is a three-terminal, four-layer semiconductor device consisting of alternating P-type and N-type materials.

The 5SHY4045L0004 thyristor has three pn junctions J1, J2, and J3. The figure below shows a thyristor with a pnpn layer. The thyristor has A terminal anode (A), a cathode (K), and a gate G), and the gate terminal (G) is connected to a p layer near the cathode (K) terminal.

The 5SHY4045L0004 transistor four layers work like two transistors, they are connected together (as shown below), the output of one forms the input of the other, and the gate acts as a kind of "starter motor" to activate them.

The 5SHY4045L0004 single thyristor (SCR) is a combination of a pnp transistor (Q1) and an npn transistor (Q2). Here, Q1's emitter acts as the anode terminal of the SCR, while Q2's emitter acts as its cathode. In addition, the base of Q1 is connected to the collector of Q2, the collector of Q1 is connected to the base of Q, and the gate terminal of the thyristor is also connected to the base of Q2.