5SHY4045L0003 ABB 硬驱动GTO晶闸管IGCT模块可控硅

5SHY4045L0003 ABB 硬驱动GTO晶闸管IGCT模块可控硅

5SHY4045L0001 3BHB018162R0001集成栅极换流晶闸管IGCT(Intergrated Gate Commutated Thyristors)是 1996年问世的用于巨型电力电子成  套装置中的新型电力半导体器件。IGCT是一 种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功  半导体开关器件,具有晶闸管的通态特性及晶体管的开关特性。

5SHY4045L0001 3BHB018162R0001由于采用了缓冲结构以及浅层发射极技术,  因而使动态损耗降低了约50%，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二_极管，从而以其独特的方式实现了晶闸管的低通态  压降、高阻断电压和晶体管稳定的开关特性有机结合.  IGCT使变流装置在功率、可靠性、 开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。  

5SHY4045L0001 3BHB018162R0001是将GTO芯片与反并联二极管和栅极驱动电路集成在一起，再与其栅极驱动器在外围以低电感方式连接,结合  了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。5SHY4045L0001  3BHB0181 62R0001具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点， 而且造成本低,成品率高,有很好的应用前景。  

5SHY4045L0001 3BHB0181 62R0001采用晶闸管技术的GTO是常用的大功率轩关器件，它相对于采用晶体管技术的IGBT在截止电压上有更高的性  能，但旷泛应用的标准GTO驱动技术造成不均匀的开通和关断过程，需要高成本的dv/dt和di/dt吸收电路和较大功率的栅极驱动单元,因而造成可靠  性下降，价格较高,也不利于串联。5SHY4045L0001 3BHB018162R0001但是,在大功率MCT技术尚未成熟以前，IGCT已经成为高压大功率低频  交流器的优选方案。

5SHY4045L0003 ABB 硬驱动GTO晶闸管IGCT模块可控硅

5SHY4045L0001 3BHB018162R0001 Intergrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device developed in 1996 for large power electronic packaging devices. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor.

5SHY4045L0001 3BHB018162R0001 because of the buffer structure and shallow emitter technology, so the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous flow diode. Thus, in its unique way, the low on-state voltage drop, high blocking voltage and stable switching characteristics of the transistor are organically combined. IGCT makes great progress in the power, reliability, switching speed, efficiency, cost, weight and volume of the converter, bringing a new leap forward to the complete set of power electronic devices.

5SHY4045L0001 3BHB018162R0001 integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in the peripheral in a low inductance mode, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor to play the performance of the thyristor in the on-stage. The off phase presents the characteristics of the transistor. 5SHY4045L0001 3BHB0181 62R0001 has the characteristics of large current, high voltage, high switching frequency, high reliability, compact structure, low loss, and resulting in low cost, high yield, and has a good application prospect.

5SHY4045L0001 3BHB0181 62R0001 GTO using thyristor technology is a commonly used high-power shut-off device. Compared with IGBT using transistor technology, GTO has higher performance in cut-off voltage, but the widely used standard GTO drive technology causes uneven turn-on and turn-off process. The need for high cost dv/dt and di/dt absorption circuits and higher power grid drive units, resulting in reduced reliability, higher prices, and is not conducive to series. 5SHY4045L0001 3BHB018162R0001 However, before high-power MCT technology is not mature, IGCT has become the preferred solution for high-power low-frequency communicators.