5SHY35L4520 ABB 硬驱动GTO晶闸管 IGCT模块

5SHY35L4520 ABB 硬驱动GTO晶闸管 IGCT模块

功率半导体器件也称电力电子器件，结合不同电路拓扑可以形成各类电力电子装置，实现整流、逆变、变频、调压等功能。随着功率半导体技术的不断革新，从高压输电到城市用电，从工业变频到医疗器械，从电动汽车的电机驱动到空调、冰箱等家用电器，再到手机、笔记本等数码产品，功率半导体器件无处不在，与我们的生活密不可分。其中，集成门极换流晶闸管（Integrated Gate Commutated Thyristor，IGCT）器件作为功率半导体器件家族中的年轻成员于1997年首次被提出，展现出了巨大的发展潜力，正成为直流电网的“芯”选择

20世纪80年代，以IGBT为代表的高速、全控型器件迅速发展。IGBT结合了金属氧化物半导体场效应晶体管（MOSFET）驱动功率小、开关速度快以及双极型晶体管（BJT）通态压降低、载流能力大的优点。随着IGBT不断更新换代，其日渐成为现代电力电子技术的主流器件，特别是压接式IGBT的出现，使其向大功率、高效率跨出一大步，已被广泛应用于柔性直流输电（VSC-HVDC）工程当中。

与此同时，通过对GTO 技术的改进，新一代可关断晶闸管类器件IGCT于20世纪90年代问世。IGCT改进了GTO芯片，并利用新型低感封装将驱动电路和芯片紧密集成到一体，显示出比传统GTO 更加显著的优点：损耗低、开关速度快、容量密度大、可靠性高等。这些优点保证了IGCT 可以在维持较低成本的基础上，安全、可靠、经济、高效地用于高压大容量功率变换领域，并在一些电力电子装置中具有更为突出的优势。

5SHY35L4520 ABB 硬驱动GTO晶闸管 IGCT模块

Power semiconductor devices, also known as power electronic devices, can be combined with different circuit topologies to form various types of power electronic devices to achieve rectification, inverter, frequency conversion, voltage regulation and other functions. With the continuous innovation of power semiconductor technology, from high-voltage power transmission to urban electricity, from industrial frequency conversion to medical devices, from the motor drive of electric vehicles to household appliances such as air conditioners and refrigerators, and then to mobile phones, notebooks and other digital products, power semiconductor devices are everywhere, and are inseparable from our lives. Among them, Integrated Gate Commutated Thyristor (IGCT) devices, as a young member of the power semiconductor device family, were first proposed in 1997, showing great development potential, and are becoming the "core" choice of DC power grid

In the 1980s, high-speed, fully controlled devices represented by IGBT developed rapidly. IGBT combines the advantages of metal oxide semiconductor field effect transistor (MOSFET) with low drive power, fast switching speed, and bipolar transistor (BJT) with low on-state voltage and high current carrying capacity. With the continuous upgrading of IGBT, it has become the mainstream device of modern power electronics technology, especially the emergence of crimped IGBT, so that it has taken a big step to high power and high efficiency, and has been widely used in flexible direct current transmission (VSC-HVDC) engineering.

At the same time, through the improvement of GTO technology, a new generation of turn-off thyristor device IGCT was introduced in the 1990s. IGCT improves the GTO chip and tightly integrates the driver circuit and chip in a new low-sensing package, showing more significant advantages than traditional GTO: low loss, fast switching speed, high capacity density, and high reliability. These advantages ensure that IGCT can be used safely, reliably, economically and efficiently in the field of high-voltage large-capacity power conversion on the basis of maintaining a low cost, and has more prominent advantages in some power electronic devices.