ABB模块HIEE300690R0001 继电器输出接口板

ABB模块HIEE300690R0001 继电器输出接口板

ABB模块HIEE300690R0001 继电器输出接口板

堆叠式RAM模块包含两个或多个堆叠在一起的RAM芯片。这允许使用更便宜的低密度晶片来制造大模块。

堆叠的芯片模块消耗更多的功率，并且比非堆叠的模块运行起来更热。堆叠模块可以使用旧的TSOP或者更新的BGA风格集成电路芯片。与旧芯片连接的硅芯片引线接合法或者更新的TSV。

存在几种提议的堆叠RAM方法，具有TSV和更宽的接口，包括宽I/O、宽I/O 2，混合存储立方体和高带宽存储器。

ABB模块HIEE300690R0001 继电器输出接口板

A stacked RAM module consists of two or more RAM chips stacked together. This allows the use of cheaper, low-density wafers to manufacture large modules.

Stacked chip modules consume more power and run hotter than non-stacked modules. Stack modules can use old TSOP or newer BGA-style IC chips. The silicon chip leads connected to the old chip are connected to the legal or newer TSV.

Several proposed stacking RAM methods exist with TSV and wider interfaces, including Wide I/O, Wide I/O 2, hybrid storage cubes, and high bandwidth memory.