GVC750BE101 3BHE009681R0101控制模块 DCS PLC系统

GVC750BE101 3BHE009681R0101控制模块 DCS PLC系统

GVC750BE101 3BHE009681R0101控制模块 DCS PLC系统

GCT集成门极换流晶闸管(ntergrated Gate Commutated Thyristors)是一种中压变频器开发的用于巨型电力电子成套装置中的电力半导体开关器件(集成门极换流晶闸管=门极换流晶闸管+门极单元)。

1997年由ABB公司提出。1GCT使变流装置在功率、可性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。

GCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起，再与其门极区动器在外用以低电感方式车接，结合了最体管的稳定关浙能力和晶管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性，GCT 有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低，成品率高，有很好的应用前景 

GVC750BE101 3BHE009681R0101控制模块 DCS PLC系统

GCT integrated Gate Commutated Thyristors (GCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a type of power semiconductor switching device developed by a medium voltage inverter for use in large power electronics packages.

It was proposed by ABB in 1997. 1GCT has made great progress in terms of power, availability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets of devices.

GCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate region actuator in a low inductance mode outside. It combines the advantages of the stable switching ability of the bulk tube and the low on-state loss of the crystal tube, and gives full play to the performance of the thyristor in the on-stage and the characteristics of the transistor in the off stage. GCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss, etc., and it has a low cost and high yield, so it has a good application prospect