ABB GJR5252300R3101 07AC91F自动化工控备件

ABB GJR5252300R3101 07AC91F自动化工控备件

ABB GJR5252300R3101 07AC91F自动化工控备件

ABB工业模块GJR5252300R3101 IGBT 用于中高功率开关电源、可再生逆变器、牵引电机驱动、感应加热和类似应用，最高可达数百千瓦。大型 IGBT 通常由许多并联器件组成，其阻断电压高达 6,500 V，能够处理数百安培。

虽然 IGBT 的开关速度比 IGCT 快，但它们的开关频率低于功率 MOSFET。对于需要 300V 和 600V 之间器件的电源转换器，可以使用 IGBT 和 MOSFET，具体取决于应用的具体需求;低于 600V，MOSFET 占主导地位，高于 600V ，IGBT 占主导地位。

与 IGBT 一样，IGCT 是用于自换向功率转换器的完全可控功率开关。　IGCT 基础知识　　IGCT 是相当于 IGBT 的晶闸管。由于它们是一种晶闸管，因此 IGCT 以压装包装形式交付。

这与 IGBT 形成鲜明对比，IGBT 可用于更广泛的应用，并提供更广泛的封装样式(图 3)。 IGCT 是 GTO 与集成栅极结构的组合。它通过简化的栅极驱 动提供 GTO 的高功率密度和低传导损耗。　　 

IGCT 将栅极驱动结构与栅极换向晶闸管 (GCT) 晶圆级器件集成在一起。IGCT 和 GTO(IGCT 的来源) 均由栅极信号控制，并且都可以承受高 di/dt 率，这意味着大多数应用不需要缓冲器。在 IGCT 中，关闭器件所需的栅极电流高于阳极电流。

高栅极电流与高 di/dt 比率相结合意味着传统互连不能用于将 IGCT 连接到栅极驱动器。相反，栅极驱动 PCB 和 IGCT 作为一个单元交付。栅极驱动器用连接到 IGCT 边缘的大圆形导体围绕器件。大的接触面积和极短的连接距离降低了栅极连接的电感和电阻，与大多数晶闸管一样，IGCT 被制造为单个晶圆(图 4)。这与作为一系列单元制造的 IGBT 形成对比，每个单元的构造类似于 n 沟道垂直功率 MOSFET，除了用 p+ 集电极层代替 n+ 漏极并形成垂直 PNP 双极结型晶体管。

ABB GJR5252300R3101 07AC91F自动化工控备件

The ABB Industrial module GJR5252300R3101 IGBT is used for medium to high power switching power supplies, renewable inverters, traction motor drives, induction heating and similar applications up to hundreds of kilowatts. Large IGBTs typically consist of many parallel devices with blocking voltages up to 6,500 V, capable of handling hundreds of amperes.

Although IGBTs switch faster than IGCTs, they switch at a lower frequency than power MOSFETs. For power converters that require devices between 300V and 600V, IGBTs and MOSFETs can be used, depending on the specific needs of the application; Below 600V, MOSFETs dominate, above 600V, IGBTs dominate.

Like the IGBT, the IGCT is a fully controllable power switch for self-commutating power converters. IGCT Basics IGCT is the thyristor equivalent of IGBT. Because they are a thyristor, IGCTs are delivered in press-pack form.

This is in stark contrast to IGBT, which can be used for a wider range of applications and offers a wider range of package styles (Figure 3). IGCT is a combination of GTO and integrated gate structure. It provides the GTO's high power density and low conduction loss through simplified gate drive.

IGCT integrates a gate drive structure with a gate commutated thyristor (GCT) wafer-level device. Both IGCT and GTO(the source of IGCT) are controlled by gate signals and can withstand high di/dt rates, which means that most applications do not require a buffer. In IGCT, the gate current required to turn off the device is higher than the anode current.

The combination of high gate current with high di/dt ratios means that conventional interconnects cannot be used to connect IGCT to gate drivers. Instead, the gate drive PCB and IGCT are delivered as one unit. The gate driver surrounds the device with a large circular conductor attached to the edge of the IGCT. The large contact area and extremely short connection distance reduce the inductance and resistance of the gate connections, and like most thyristors, IGCT is manufactured as a single wafer (Figure 4). This is in contrast to IGBTs manufactured as a series of cells, each of which is constructed similarly to an n-channel vertical power MOSFETs, except that the p+ collector layer replaces the n+ drain and forms a vertical PNP bipolar junction transistor.